𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Annealing of ion beam amorphized diamond surfaces studied by in situ electron spectroscopy

✍ Scribed by Hoffman, A.; Bobrov, K.; Fisgeer, B.; Shechter, H.; Folman, M.


Book ID
121293615
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
755 KB
Volume
5
Category
Article
ISSN
0925-9635

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Ion-beam-induced crystallization of carb
✍ Steffen, Hans Joachim πŸ“‚ Article πŸ“… 1998 πŸ› John Wiley and Sons 🌐 English βš– 501 KB

The inΓ‘uence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ‚ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.