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Annealing of defects induced by Ge irradiation of silica probed with variable energy positrons

โœ Scribed by A.P. Knights; L.B. Allard; J.L. Brebner; P.J. Simpson


Book ID
114168736
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
428 KB
Volume
127-128
Category
Article
ISSN
0168-583X

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The emission of the high-momentum annihilation radiation from the subvalent ion core shells and electron density around a positron localized at a vacancy-group-V-impurity atom complexes produced in oxygen-lean Ge doped with P, As, Sb, and Bi by irradiation with 60 Co gamma-rays at room temperature h