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Annealing Induced Dissipation of Residual Trapped Charge in Focused Ion Beam Processed Wide Band Gap Materials for Device Applications.

✍ Scribed by Stevens-Kalceff, MA; Gowlett, P


Book ID
120027017
Publisher
Cambridge University Press
Year
2006
Tongue
English
Weight
121 KB
Volume
12
Category
Article
ISSN
1431-9276

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