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-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS

✍ Scribed by Moongyu Jang; Yarkyeon Kim; Myungsim Jeon; Cheljong Choi; Inbok Baek; Seongjae Lee; Byoungchul Park


Book ID
114618328
Publisher
IEEE
Year
2006
Tongue
English
Weight
306 KB
Volume
53
Category
Article
ISSN
0018-9383

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We examine the subthreshold behavior of metal oxide semiconductor field effect transistors (MOSFETs) with Schottky barrier (SB) source/drain and large on/off ratios. Thermionic emission dominates the drain current versus gate voltage curves and the sharp turn on is attributed to a decrease in the ef