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Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating

✍ Scribed by G.A. Kachurin; K.S. Zhuravlev; N.A. Pazdnikov; A.F. Leier; I.E. Tyschenko; V.A. Volodin; W. Skorupa; R.A. Yankov

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