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Annealing effect on the barrier properties and TMR of magnetic tunneling junctions fabricated in various oxidation conditions

✍ Scribed by D.M. Jeon; J.W. Park; D.H. Lee; S.Y. Yoon; D.H. Yoon; S.J. Suh

Book ID
108181570
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
288 KB
Volume
272-276
Category
Article
ISSN
0304-8853

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## Abstract We have investigated the composition dependence of magnetic tunnel junctions (MTJs) with Nb‐alloyed Al‐oxide (NbAlO~x~) and analyzed the microstructure changes and electrical property of Nb alloyed Al‐oxide layer. After annealing, tunnel magnetoresistance (TMR) ratio of MTJ with Nb‐allo