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Annealing effect of SnO2 films prepared by chemical vapor deposition: Evidence of chlorine removal by auger electron spectroscopy and rutherford back-scattering spectrometry studies

✍ Scribed by K. Kim; T.G. Finstad; W.K. Chu; X.B. Cox; R.W. Linton

Publisher: Elsevier Science
Year: 1985
Weight: 267 KB
Volume: 13
Category: Article
ISSN: 0379-6787
DOI: 10.1016/0379-6787(85)90023-7

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✦ Synopsis

Using a rather simple chemical vapor deposition apparatus, transparent conducting tin oxide films were fabricated through the decomposition of SnCl4.5H20. The films showed good electrical properties but high chlorine contamination. We have found that the chlorine can be removed by annealing at 500 K in a hydrogen ambient. This has been established by Auger electron spectroscopy and Rutherford backscattering spectrometry.