Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering
β Scribed by G. Irmer; T. Brumme; M. Herms; T. Wernicke; M. Kneissl; M. Weyers
- Book ID
- 106398027
- Publisher
- Springer US
- Year
- 2008
- Tongue
- English
- Weight
- 414 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0957-4522
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π SIMILAR VOLUMES
## Abstract We use Raman scattering to investigate the folded longitudinal acoustic (LA) phonons in a series of In~__x__~Ga~1β__x__~N/GaN superlattices (SLs) grown by molecular beam epitaxy with different compositions (15% < __x__ < 38%) and SL periods (from 8 to 20 nm). A novel, ultralow wavenumbe
Hexagonal a-plane GaN films with Γ°1 1 2 0Γ-orientation were grown by metalorganic vapour phase epitaxy on r-plane sapphire substrates. Spectroscopic ellipsometry in the photon energy range from 1.2 up to 5 eV was applied in order to determine the ordinary and extraordinary complex dielectric functio