Anisotropic Polyion-Complex Gels from Template Polymerization
✍ Scribed by Y. Shigekura; Y. M. Chen; H. Furukawa; T. Kaneko; D. Kaneko; Y. Osada; J. P. Gong
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 370 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0935-9648
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✦ Synopsis
Bottom-gate transistors were prepared on clean glass substrates. The bottom electrodes were applied by shadow-mask evaporation of a thin chromium adhesion layer and gold. Subsequently, poly(vinylidene fluoride/trifluoroethylene) (P(VDF/TrFE); 65/35 mol-%) random copolymer was applied by spin casting from filtered 2-butanone solutions. These devices were annealed in a vacuum oven at 138 °C to enhance the crystallinity. Gold or samarium source-drain electrodes were created by using shadow-mask evaporation with a wire to create a channel of typically 10 to 40 lm in length and 4 to 6 mm in width. Pure [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) or a 4/1 wt.-% blend with poly[2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylenevinylene] (MEH-PPV) polymer was spin cast onto the layer stack from chlorobenzene in a N 2 filled glovebox. The PCBM solutions had a concentration of 30 g L -1 and the blend solutions were 15 g L -1 . The blend devices were annealed at 90 °C. Field-effect measurements on transistors were performed in dark and vacuum using a Keithley 4200 semiconductor analyzer. Polymer layer thicknesses were determined using a Dektak profilometer. The programming operation experiment in Figure 4 was performed with an Agilent 8114A pulse generator. Any capacitive charge obtained by the programming pulses was removed before the read-out measurement, by connecting all three electrodes for 3 min.