๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Anisotropic magnetoresistance of Bi2212 crystals

โœ Scribed by V.N. Zavaritsky; J. Vanacken; V.V. Moshchalkov; A.S. Alexandrov


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
493 KB
Volume
404
Category
Article
ISSN
0921-4534

No coin nor oath required. For personal study only.

โœฆ Synopsis


In-plane resistance, R ab รฐB; T รž in Bi2212 is studied under pulsed magnetic fields (perpendicular to the basal plane), B 6 50 T both above and below T c $ 90 K. In contrast with the negative out-of-plane magnetoresistance (MR), the normal state in-plane MR is found to be positive. The absolute values of these MRs are found to be similar despite 4-5 orders of magnitude difference between the corresponding resistivities. These similarities, as well as the giant magnitude of the MRs, exceeding any orbital contribution by two orders of magnitude, could be broadly understood as the result of the breaking of preformed pairs by the magnetic field. The resistive upper critical fields H c2 รฐT รž, estimated from the inand out-of-plane MRs taken below T c , are approximately the same and reveal non-BCS temperature dependences compatible with the Bose-Einstein condensation field of preformed charged bosons. A significant reduction of the zero field R ab รฐT รž is observed after extensive investigation of some crystals with numerous 50 T pulses.


๐Ÿ“œ SIMILAR VOLUMES


Magnetoresistance in Bi-2212 single crys
โœ J.C. Soret; L. Ammor; B. Martinie; Ch. Goupil; V. Hardy; J. Provost; A. Ruyter; ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 437 KB
Magnetic measurements on Tl-2212 and Bi-
โœ M. Oussena; S. Porter; A. Volkozub; P.A.J. de Groot; P.C. Lanchester; D. Ogborne ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 139 KB

We have compared the magnetic behaviour of two identicaly shaped single crystals, TI2Ba2CaCu208 and Bi2Sr:CaCu20 s. The critical current density is found to decrease more rapidly with temperature in Bi-2212 although it is the highest in this material at low temperatures (T < 10K). I-V characteristic