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Andreev reflection and quantum transport in an SNS junction

✍ Scribed by Hideaki Takayanagi

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
357 KB
Volume
227
Category
Article
ISSN
0921-4526

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✦ Synopsis

The superconducting and normal transport in a semiconductor-coupled Josephson junction with a submicron split gate electrode has been studied. The maximum supercurrent I~ and the conductance show step-wise changes as a function of gate voltage Vg. This is evidence that I¢ is quantized in the superconducting quantum point contact. The current-voltage characteristics also change from current-deficit to excess-current as the absolute value of Vg increases. This change is explained by Andreev reflection, which leads to the reflected holes being focused on the quantum point contact.

To study the change, the dependence of the gate voltage and the magnetic field of the differential resistance-voltage characteristics are measured and discussed.

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Effects of impurities on Andreev reflect
Effects of impurities on Andreev reflection in an N-S bilayer
✍ J. Herath; D. Rainer 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 742 KB

We calculate the effects of impurities in the normal layer of an N-S contact on the beam of Andreev reflected electrons. We find oscillations in the intensity of the beam which are superimposed on the classical exponential decay. This effect is interpreted as oscillations in the impurity cross secti