๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Analytical model and characterization of abnormally structured MOSFETs

โœ Scribed by Jae-Sung Lee; Yong-Hyun Lee


Book ID
114538473
Publisher
IEEE
Year
2000
Tongue
English
Weight
145 KB
Volume
47
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Analytical loss model of power MOSFET
โœ Yuancheng Ren; Ming Xu; Jinghai Zhou; Lee, F.C. ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› IEEE ๐ŸŒ English โš– 749 KB
Analytical model of 6H-SiC MOSFET
โœ Anil Kumar; Navneet Kaushik; Subhasis Haldar; Mridula Gupta; R.S. Gupta ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 272 KB

An analytical model of 6H-SiC inversion channel MOSFET is developed incorporating the influence of incomplete dopant ionization. The charge sheet approach is used to evaluate the drain current, transconductance and drain conductance. Maximun transconductance of 46 mS is obtained for V 550 mV at a ga