## Abstract Using micro‐beam X‐ray diffraction (XRD), small __c__‐axis tilting was observed in maskless epitaxially laterally overgrown GaN (ELO‐GaN), which is a suitable underlying layer for realizing a reliable GaN‐based blue‐violet laser diode. By analyzing the micro‐scale structure of ELO‐GaN w
Analysis on the high luminous flux white light from GaN-based laser diode
✍ Scribed by Y. Xu; H. Hu; L. Chen; G. Song; W. Zhuang
- Book ID
- 106029453
- Publisher
- Springer
- Year
- 2009
- Tongue
- English
- Weight
- 261 KB
- Volume
- 98
- Category
- Article
- ISSN
- 0721-7269
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