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Analysis on high-frequency characteristics of SOI lateral BJTs with self-aligned external base for 2-GHz RF applications

✍ Scribed by Shino, T.; Yoshitomi, S.; Nii, H.; Kawanaka, S.; Inoh, K.; Yamada, T.; Fuse, T.; Katsumata, Y.; Yoshimi, M.; Watanabe, S.; Matsunaga, J.-I.


Book ID
114539016
Publisher
IEEE
Year
2002
Tongue
English
Weight
241 KB
Volume
49
Category
Article
ISSN
0018-9383

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