InGaN/GaN self-organized quantum dots with density of (2 Γ 5) Γ 10 10 cm Γ 2 , internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristic
Analysis of the wavelength-power performance roll-off in green light emitting diodes
β Scribed by Christian Wetzel; Theeradetch Detchprohm; Peng Li; Jeffrey S. Nelson
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 279 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1862-6351
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