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Analysis of the structural parameters of an a-Si : H n+-i-n+structure by numerical simulations

โœ Scribed by A. Eray; G. Nobile


Book ID
111556736
Publisher
Springer US
Year
2003
Tongue
English
Weight
90 KB
Volume
14
Category
Article
ISSN
0957-4522

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โœ Francesco G.Della Corte; Fortunato Pezzimenti ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 134 KB

This paper presents the results of a simulation study focused on the evaluation of the DC characteristics of an n-p-n SiGe-based heterojunction bipolar transistor (HBT) performing an extremely thin n รพ hydrogenated amorphous silicon (a-Si:H) emitter. The a-Si:H(n)/SiGe(p) structure exhibits an energ