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Analysis of the quasi-saturation behavior considering the drain-to-source voltage and cell-spacing effects for a vertical DMOS power transistor

✍ Scribed by K.H. Lou; C.M. Liu; J.B. Kuo


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
372 KB
Volume
36
Category
Article
ISSN
0038-1101

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