Analysis of the optical-klystron gain depression induced by inhomogeneous broadening effects

Determination of the electron—phonon int

Determination of the electron—phonon interaction of strongly inhomogeneously broadened optical transitions by electric-field- induced changes of persistent spectral holes

✍ U. Bogner; K. Beck; P. Schätz; Max Maier 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 450 KB

X method is presented for the direct mensurement or the true phonon sideband -and the Debye-Walkr factor of strongly inhomogeneously broadened optical transitions. The method is based on electric-field-induced Ming of the center of a spectral hole. It is applied to fuorcscence transitions of dye nio