✦ LIBER ✦
Analysis of the effects of mechanical stress on the properties of p-channel MOS structures. Part I. Choice of the theoretical model. The effect of stress on the valence band structure in silicon: Bogdan Moeschke. Electron Technol.12, (1) 29
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 125 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0026-2714
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