Analysis of the Correlation Between the Programmed Threshold-Voltage Distribution Spread of nand Flash Memory Devices and Floating-Gate Impurity Concentration

✍ Scribed by Shirota, R.; Sakamoto, Y.; Hung-Ming Hsueh; Jian-Ming Jaw; Wen-Chuan Chao; Chih-Ming Chao; Sheng-Fu Yang; Arakawa, H.

• Book ID: 114620694
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 312 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2165073