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Analysis of Safe Operating Area of NLDMOS and PLDMOS Transistors Subject to Transient Stresses

✍ Scribed by Malobabic, S.; Salcedo, J.A.; Hajjar, J.; Liou, J.J.

Book ID: 114620114
Publisher: IEEE
Year: 2010
Tongue: English
Weight: 728 KB
Volume: 57
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2010.2058310

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