Analysis of Point Defect States in Coppe
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D. E. Becker; F. Dworschak; H. Wollenberger
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Article
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1972
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John Wiley and Sons
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English
⚖ 434 KB
## Abstract The temperature dependence of the defect production has been investigated by irradiating high purity copper samples with 3 MeV electrons in the temperature range 50 to 207 K. From the initial damage rate the capture radius of the vacancy for migrating interstitials is derived. The obser