𝔖 Bobbio Scriptorium

✦ LIBER ✦

Analysis of molecular-beam epitaxially grown ZnSe on GaAs and GaP by means of ion channeling: Yuji Hishida et al, J appl Phys, 62, 1987, 4460–4464

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 155 KB
Volume: 39
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(89)90480-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Investigation of GaAs/(Al,Ga)As multiple

Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular-beam epitaxy: U K Reddy et al, J appl Phys, 62, 1987, 4858–4862

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 155 KB