Analysis of emitter efficiency enhancement induced by residual stress for in situ phosphorus-doped polysilicon emitter transistors

✍ Scribed by Kondo, M.; Shiba, T.; Tamaki, Y.

• Book ID: 114536859
• Publisher: IEEE
• Year: 1997
• Tongue: English
• Weight: 239 KB
• Volume: 44
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.585554