A number of transient and steady-state finite element formulations of the semiconductor drift-diffusion equations are studied and compared with respect to their accuracy and efficiency on a simple test structure (the Mock diode). A new formulation, with a consistent interpolation function used to re
β¦ LIBER β¦
Analysis of a finite element method for the drift-diffusion semiconductor device equations: the multidimensional case
β Scribed by Zhangxin Chen; Bernardo Cockburn
- Book ID
- 105879408
- Publisher
- Springer-Verlag
- Year
- 1995
- Tongue
- English
- Weight
- 812 KB
- Volume
- 71
- Category
- Article
- ISSN
- 0029-599X
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