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Analysis of 2-D scattering problems using a novel nonuniform gridding FDTD method

✍ Scribed by M. K. Sun; W. Y. Tam

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 183 KB
Volume: 28
Category: Article
ISSN: 0895-2477
DOI: 10.1002/1098-2760(20010320)28:6<430::aid-mop1062>3.0.co;2-j

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✦ Synopsis

5. CONCLUSION

New extraction formulas for noise-wave sources in the noiseequivalent circuit of MESFET and HEMT devices are proposed. The correlation between noise sources is included by defining the complex equivalent temperature, called the correlation temperature. The noise-wave parameters are calculated and shown graphically as a function of frequency. Good agreement between modeled and measured transistor noise parameters is observed. It is shown that our model has better accuracy than the existing one. Generally, a noise parameter measurement at a single frequency is needed to predict the transistor noise parameters over a broad frequency range. The model is convenient for CAD applications in low-noise circuit design.

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