Analysis by FT-IR spectroscopy of SiO2-polycrystalline structures used in micromechanics: Stress measurements
✍ Scribed by J. Samitier; S. Marco; O. Ruiz; J.R. Morante; J. Esteve-Tinto; J. Bausells
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 680 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0924-4247
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✦ Synopsis
The evolution of the intrinsic stress with the annealing temperature in silicon oxide layers thermally grown and deposited by the low-pressure chemical vapour method has been analysed by the reflection-absorption Fourier transform infrared (FT-IR) technique. The results show that the annealing process in the low-pressure chemical vapour deposition (LPCVD) silicon oxide produces a high compressive stress in the wafer plane, due to a decrease of density in the jayer. Moreover, for overlying structures used in micromechanics, such as polycrystalline silicon-silicon oxide, we,have pointed out the existence of induced stress between the layers. The stress evolution in the silicon oxide layers has been compared with the results obtained using warpage and X-ray diffraction measurements.