Analysis and Design of Mosfets: Modeling, Simulation and Parameter Extraction

✍ Scribed by J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez (auth.)

Publisher: Springer US
Year: 1998
Tongue: English
Leaves: 355
Edition: 1
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

Analysis and Design of MOSFETs: Modeling, Simulation, and ParameterExtraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers.
Analysis and Design of MOSFETs: Modeling, Simulation, and ParameterExtraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

✦ Table of Contents

Front Matter....Pages i-xiv
MOSFET physics and modeling....Pages 1-108
MOSFET simulation using device Simulators....Pages 109-162
Extraction of the threshold voltage of MOSFETs....Pages 163-202
Methods for extracting the effective channel length of MOSFETs....Pages 203-255
Extraction of the source and drain series resistances of MOSFETs....Pages 257-289
Parameter extraction of lightly-doped drain (LDD) MOSFETs....Pages 291-326
Back Matter....Pages 327-349

✦ Subjects

Circuits and Systems; Electrical Engineering

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