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Analysis and characterization of P-N junction diode switching

โœ Scribed by Kuno, H.J.


Book ID
114588688
Publisher
IEEE
Year
1964
Tongue
English
Weight
530 KB
Volume
11
Category
Article
ISSN
0018-9383

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Electrical properties of GaSb Schottky d
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The electrical properties of Schottky diodes and p-n junctions on GaSb ((100), doped with 2 x 10 t7 cm-~ tellurium) were examined. Capacitance-voltage measurements at 300 K show barrier heights of 0.65 eV (Al), 0.6 eV (Au, In, Pd), 0.5 eV (Ga) and 0.42 eV (Sb). The barrier heights tend to track the