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Analyses of the picosecond range transient in a high-power switch based on a bipolar GaAs transistor structure

✍ Scribed by Vainshtein, S.N.; Yuferev, V.S.; Kostamovaara, J.T.

Book ID: 114618036
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 450 KB
Volume: 52
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2005.859660

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