This paper concerns diffusion related properties of Cu in Ge and Si. In Ge, Cu prefers to occupy a substitutional lattice site whereas Cu in Si is mainly dissolved on an interstitial position. This difference in the lattice site occupancy is also reflected in the diffusion behaviour. Whereas Cu diff
โฆ LIBER โฆ
Analyses of diffusion-related phenomena in steel process
โ Scribed by Tooru Matsumiya
- Book ID
- 107465360
- Publisher
- ASM International
- Year
- 2005
- Tongue
- English
- Weight
- 395 KB
- Volume
- 26
- Category
- Article
- ISSN
- 1054-9714
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