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Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

✍ Scribed by Seo, Kyungah; Kim, Insung; Jung, Seungjae; Jo, Minseok; Park, Sangsu; Park, Jubong; Shin, Jungho; Biju, Kuyyadi P; Kong, Jaemin; Lee, Kwanghee; Lee, Byounghun; Hwang, Hyunsang


Book ID
121274324
Publisher
Institute of Physics
Year
2011
Tongue
English
Weight
944 KB
Volume
22
Category
Article
ISSN
0957-4484

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