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An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier

✍ Scribed by Hacker, J.B.; Bergman, J.; Nagy, G.; Sullivan, G.; Kadow, C.; Heng-Kuang Lin, ; Gossard, A.C.; Rodwell, M.; Brar, B.


Book ID
120478142
Publisher
IEEE
Year
2004
Tongue
English
Weight
213 KB
Volume
14
Category
Article
ISSN
1531-1309

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## Abstract A low power consumption and high gain ultra‐wide‐band (UWB) low noise amplifier (LNA) utilizing a common‐gate stage connected with a common‐source stage by using current‐reused structure is proposed. The implemented LNA exhibits a maximum power gain of 14.2 dB with a total (core) power