𝔖 Bobbio Scriptorium

✦ LIBER ✦

An ultra-low on-resistance power MOSFET fabricated by using a fully self-aligned process

✍ Scribed by Ueda, D.; Takagi, H.; Kano, G.

Book ID: 114595952
Publisher: IEEE
Year: 1987
Tongue: English
Weight: 898 KB
Volume: 34
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1987.23017

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[Inst. Electr. Eng. Japan 13th Internati

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - An ultra dense trench-gated power MOSFET technology using a self-aligned process

✍ Jun Zeng, ; Dolny, G.; Kocon, C.; Stokes, R.; Kraft, N.; Brush, L.; Grebs, T.; J 📂 Article 📅 2001 🏛 Inst. Electr. Eng. Japan 🌐 Japanese ⚖ 430 KB