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An iterative method applied to optimize the design of PIN photodiodes for enhanced radiation tolerance and maximum light response

✍ Scribed by A.P. Cédola; M.A. Cappelletti; G. Casas; E.L. Peltzer y Blancá


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
366 KB
Volume
629
Category
Article
ISSN
0168-9002

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✦ Synopsis


An iterative method based on numerical simulations was developed to enhance the proton radiation tolerance and the responsivity of Si PIN photodiodes. The method allows to calculate the optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total reverse current of the photodiode and maximize its response to light. The implementation of the method is useful in the design of devices whose operation point should not suffer variations due to radiation.