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An iterative approximation for the charge-storage capacity of MOS capacitors with an application to DRAM trench capacitor memory cells

✍ Scribed by Perry, R.J.; Uyemura, J.P.


Book ID
114536386
Publisher
IEEE
Year
1995
Tongue
English
Weight
853 KB
Volume
42
Category
Article
ISSN
0018-9383

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