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An interfacial property of the InGaAs/Semi-insulating InP structure prepared by metal organic vapor phase epitaxy

✍ Scribed by Nojima, S. ;Oishi, M. ;Asahi, H. ;Nagai, H.


Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
180 KB
Volume
90
Category
Article
ISSN
0031-8965

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