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An in situ infrared study of the room temperature oxidation of silicon with atomic and molecular oxygen

✍ Scribed by W.C.M. Claassen; R.W.A.H. Schmitz; J. Dieleman


Book ID
107925806
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
287 KB
Volume
36
Category
Article
ISSN
0169-4332

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An AES study of the room-temperature oxi
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## Abstract Tantalum silicide films of ∼200 nm thick and composition TaSi~2~ were obtained by co‐sputtering in a Varian 3120 S‐gun magnetron system. The films were then introduced in an AES spectrometer and bombarded with Ar^+^ ions of different energies in order to obtain surfaces of different com