An improved simple procedure for calculating the open-circuit voltage of passivated emitter silicon solar cells

✍ Scribed by Arturo Morales-Acevedo

• Publisher: Elsevier Science
• Year: 1987
• Weight: 150 KB
• Volume: 22
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(87)90061-5

✦ Synopsis

The effects due to band gap shrinkage, Auger and surface recombination, variation of mobility and lifetime of minority carriers, and the electric field (caused by the gradient of effective doping concentration in the emitter) are included in a simple iterative procedure for the computer calculation of the open-circuit voltage of passivated emitter silicon solar cells. It is shown that in order to obtain high conversion efficiencies, the surface impurity concentration has to be reduced by an order of magnitude with respect to conventional n÷-p diffused solar cells.