An improved model for noise characterization of microwave GaAs FETs
β Scribed by Froelich, R.K.
- Book ID
- 114551031
- Publisher
- IEEE
- Year
- 1990
- Tongue
- English
- Weight
- 337 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0018-9480
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract An application of artificial neural networks (ANNs) for accuracy improving of the microwave FETs (MESFET/HEMT, dualβgate MESFET) noise modeling is presented in this paper. The proposed model is based on a basic transistor noise wave model, whose noise wave temperatures are assumed to be
## Abstract An improved model of a modified intrinsic equivalent circuit of deltaβdoped AlGaAs/InGaAs/GaAs HEMT, which incorporates the additional capacitive effect physically present due to delta doping and a feedback resistor between gate and drain, is proposed. Admittance parameters of the devic