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An improved hydrodynamic transport model for silicon

✍ Scribed by Tang, T.; Ramaswamy, S.; Nam, J.

Book ID
114535196
Publisher
IEEE
Year
1993
Tongue
English
Weight
720 KB
Volume
40
Category
Article
ISSN
0018-9383

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## Abstract Technologies such as solid‐phase epitaxial regrowth and millisecond annealing techniques have led to a wide range of maximum temperatures and heating rates for activating dopants and eliminating ion implantation damage for transistor junction formation. Developing suitable annealing str