An improved intrinsic small-signal equiv
β
Vandana Guru; Jyotika Jogi; Mridula Gupta; H. P. Vyas; R. S. Gupta
π
Article
π
2003
π
John Wiley and Sons
π
English
β 102 KB
## Abstract An improved model of a modified intrinsic equivalent circuit of deltaβdoped AlGaAs/InGaAs/GaAs HEMT, which incorporates the additional capacitive effect physically present due to delta doping and a feedback resistor between gate and drain, is proposed. Admittance parameters of the devic