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An improved HEMT noise model for optical preamplifier design

✍ Scribed by Gao Jianjun; Gao Baoxin; Liang Chunguang


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
110 KB
Volume
28
Category
Article
ISSN
0895-2477

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## Abstract An improved model of a modified intrinsic equivalent circuit of delta‐doped AlGaAs/InGaAs/GaAs HEMT, which incorporates the additional capacitive effect physically present due to delta doping and a feedback resistor between gate and drain, is proposed. Admittance parameters of the devic