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An HSF-SIMS Investigation of the Prephosphatation Contribution to the Phosphatation Process of Silicon Steel Surface

✍ Scribed by H. Allali; M. Ben Embarek; O. Debré; B. Nsouli; A. Oladipo; A. Roche; J.-P. Thomas


Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
204 KB
Volume
11
Category
Article
ISSN
0951-4198

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✦ Synopsis


Secondary ion mass spectrometry based on High energy (MeV) Ar 3 + ions and Fast extraction (time-of-flight or TOF) has been used for investigating the prephosphatation contribution to the phosphatation process of silicon steel sample surface. The so-called HSF-SIMS technique allows easy identification and semi-quantification of the Solid material-specific ions such as Na + , Na 2 OH + , PO 2 -and PO 3 -. A high sensitivity for phosphate species present on steel surfaces is observed, enabling one to study the effects of pre-and post-deposition treatments on the state of the surface phosphate layer. Finally, the prospect for quantitative analysis is demonstrated by the good correlation between measured secondary ion yields and superficial concentration of the deposited phosphate.