An experimental study on the temperature dependence of electron affinity and ionization energy at semiconductor surfaces
✍ Scribed by W. Mönch; R. Enninghorst; H.J. Clemens
- Publisher
- Elsevier Science
- Year
- 1981
- Weight
- 209 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0167-2584
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
We have study the heavy-hole exciton states in GaSb-GaInAsSb-GaSb type-I spherical Quantum Dots, using temperature-dependent static dielectric constant and electron affinity, with a finite height potential barrier, as a function of the quantum dot radius for several values of Indium concentration. O
We investigate spectrally resolved continuous wave (CW) and spectrally and time-resolved switch-on emission properties of an InAs/InGaAs quantum-dot laser. The temperature and injection current dependence of the excited-state and ground-state emission dynamics is studied in the range between 20 °C a