The fixed oxide charge will cause the MOS capacitor (MOS-C) flat-band voltage to shift. We can observe the potential distribution to determine the MOS-C flat-band voltage. However, the potential distribution can be obtained from the integration of the electric field distribution. The integration of
β¦ LIBER β¦
An equivalent circuit model for transverse acoustoelectric voltage measurements in semiconductors
β Scribed by F. Palma; G. De Cesare; A. Stagni
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 570 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0038-1101
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