𝔖 Bobbio Scriptorium
✦   LIBER   ✦

An equivalent circuit model for transverse acoustoelectric voltage measurements in semiconductors

✍ Scribed by F. Palma; G. De Cesare; A. Stagni


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
570 KB
Volume
33
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


An equivalent-circuit modelling on verti
✍ Chia-Cherng Chang; Szu-Ju Li; Yao-Tsung Tsai πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 370 KB

The fixed oxide charge will cause the MOS capacitor (MOS-C) flat-band voltage to shift. We can observe the potential distribution to determine the MOS-C flat-band voltage. However, the potential distribution can be obtained from the integration of the electric field distribution. The integration of

Simplified equivalent-circuit modelling
✍ Jing-Fu Dai; Chia-Cherng Chang; Jia-Wen Lee; Szu-Ju Li; Yao-Tsung Tsai πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 183 KB

## Abstract In this paper, we study the decoupled method which requires less memory on semiconductor device simulation. The decoupled method decouples the three equivalent circuits of semiconductor and solves them sequentially. The three equivalent circuits are formed by formulating the three parti