✦ LIBER ✦

An equivalent circuit model for multielectrode lasers: Potential devices for millimeter-wave applications

✍ Scribed by H. Elkadi; J. P. Vilcot; D. Decoster

Book ID: 112146008
Publisher: John Wiley and Sons
Year: 1993
Tongue: English
Weight: 503 KB
Volume: 6
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.4650060410

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Microwave small-signal equivalent circui

Microwave small-signal equivalent circuit model for multielectrode lasers

✍ H. Elkadi; R. Hamelin; J. P. Vilcot; D. Decoster 📂 Article 📅 1994 🏛 John Wiley and Sons 🌐 English ⚖ 422 KB

An equivalent circuit model of supercapa

An equivalent circuit model of supercapacitors for applications in wireless sensor networks

✍ Yang, Hengzhao (author);Zhang, Ying (author) 📂 Article 📅 2011 🏛 SPIE ⚖ 316 KB

Equivalent circuit modeling of losses an

Equivalent circuit modeling of losses and dispersion in single and coupled lines for microwave and millimeter-wave integrated circuits

✍ Tripathi, V.K.; Hill, A. 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 581 KB

A new development of an equivalent circu

A new development of an equivalent circuit model for magnetostatic forward volume wave transducers

✍ Yashiro, K.; Ohkawa, S. 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 743 KB

Modeling of Multilayer Suspended Microst

Modeling of Multilayer Suspended Microstrip Line and its Discontinuities on CMOS Grade Silicon Substrate for Millimeter Wave Integrated Circuit Applications

✍ Prasad, Manish ;Gaur, Arun S. ;Sharma, Vivek K. ;Pathak, Nagendra P. 📂 Article 📅 2008 🏛 Springer 🌐 English ⚖ 522 KB

An improved intrinsic small-signal equiv

An improved intrinsic small-signal equivalent circuit model of delta-doped AlGaAs/InGaAs/GaAs HEMT for microwave frequency applications

✍ Vandana Guru; Jyotika Jogi; Mridula Gupta; H. P. Vyas; R. S. Gupta 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 102 KB

## Abstract An improved model of a modified intrinsic equivalent circuit of delta‐doped AlGaAs/InGaAs/GaAs HEMT, which incorporates the additional capacitive effect physically present due to delta doping and a feedback resistor between gate and drain, is proposed. Admittance parameters of the devic