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An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body

✍ Scribed by He, Jin; Liu, Feng; Bian, Wei; Feng, Jie; Zhang, Jian; Zhang, Xing


Book ID
121408114
Publisher
Institute of Physics
Year
2007
Tongue
English
Weight
382 KB
Volume
22
Category
Article
ISSN
0268-1242

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