An analytical threshold-voltage model of trench-isolated MOS devices with nonuniformly doped substrates

✍ Scribed by Chung, S.S.-S.; Li, T.-C.

• Book ID: 114534517
• Publisher: IEEE
• Year: 1992
• Tongue: English
• Weight: 801 KB
• Volume: 39
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.123486