An Analytical – Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects

✍ Scribed by Roldán, J.B.; Gamiz, F.; Jiménez-Molinos, F.; Sampedro, C.; Godoy, A.; García-Ruiz, F.J.; Rodriguez, N.

• Book ID: 114620168
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 552 KB
• Volume: 57
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2010.2067217