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An analytical method of evaluating variation of the threshold voltage shift caused by the negative-bias temperature stress in poly-Si TFTs

✍ Scribed by Maeda, S.; Maegawa, S.; Ipposhi, T.; Kuriyama, H.; Ashida, M.; Inoue, Y.; Miyoshi, H.; Yasuoka, A.


Book ID
114537170
Publisher
IEEE
Year
1998
Tongue
English
Weight
255 KB
Volume
45
Category
Article
ISSN
0018-9383

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